BVDSS 100V RDS(ON) Max 2mΩ @ VGS = 10V ID TC = +25°C 250A Description and Applications This new generation N-Channel enhancement mode MOSFET is designed to minimize R.

This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching pe.

and Applications This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Applications
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DMTH10H1M7STLWQ

DMTH10H003SPSW

DMTH10H005LCT

DMTH10H005SCT

DMTH10H009LFG

DMTH10H009LPS

DMTH10H009LPSQ

DMTH10H009SPS

DMTH10H009SPSQ

DMTH10H010LCT

DMTH10H010LPS

DMTH10H010SCT

DMTH10H010SPS

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