* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Complementary Pair MO.

Features and Benefits
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast .

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits
* Low On-Resistance
* .

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