DMN65D8LDWQ mosfet equivalent, dual n-channel mosfet.
V(BR)DSS 60V
RDS(ON)
8Ω @ VGS = 5V 6Ω @ VGS = 10V
Package SOT363
ID TA = +25°C
170mA
200mA
Description
This new generation MOSFET is designed to minimize the on-stat.
* Dual N-Channel MOSFET
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
*.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Dual N-Channel MOSFET
* Low On-Resista.
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