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DMN62D2UVT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
2.0Ω @VGS = 5.0V 2.5Ω @VGS = 2.5V 4.0Ω @VGS = 1.8V
ID TA = +25°C
455mA 427mA 358mA
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
General-purpose interfacing switches Power-management functions
TSOT26
Features and Benefits
Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.