Datasheet Summary
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
2.0Ω @VGS = 5.0V 2.5Ω @VGS = 2.5V 4.0Ω @VGS = 1.8V
ID TA = +25°C
455mA 427mA 358mA
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
- General-purpose interfacing switches
- Power-management functions
TSOT26
Features and Benefits
- Low On-Resistance
- Very Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen...