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DMN62D2UVT - 60V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

General-purpose interfacing switches Power-management functions TSOT26

Key Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.
  • An automotive-compliant part is available under separate data.

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Full PDF Text Transcription (Reference)

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DMN62D2UVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 2.0Ω @VGS = 5.0V 2.5Ω @VGS = 2.5V 4.0Ω @VGS = 1.8V ID TA = +25°C 455mA 427mA 358mA Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.  General-purpose interfacing switches  Power-management functions TSOT26 Features and Benefits  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.