BVDSS 30V RDS(ON) Max 60mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V ID Max TA = +25°C 2.7A 2.1A Description and Applications This MOSFET is designed to minimize the on-state re.

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, makin.

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* General Purpose Interfacing Switch
* Powe.

DMN3061SQ

DMN3061SVT

DMN3061SVTQ

DMN3061SWQ

DMN3060LVT

DMN3060LW

DMN3065LW

DMN3067LW

DMN3069L

DMN3005LK3

DMN3007LSS

DMN3008SFG

DMN3008SFGQ

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