DMN3061SW mosfet equivalent, n-channel mosfet.
BVDSS 30V
RDS(ON) Max
60mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V
ID Max TA = +25°C
2.7A 2.1A
Description and Applications
This MOSFET is designed to minimize the on-state re.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, makin.
and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* General Purpose Interfacing Switch
* Powe.
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