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DMN2053UFDBQ - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Load switches Power management functions Portable power adaptors Mechanical D

Features

  • PCB Footprint of 4mm2.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Low Profile, 0.6mm Maximum Height.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen- and Antimony-Free. “Green” Device (Note 3).
  • The DMN2053UFDBQ is suitable for automotive.

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Full PDF Text Transcription

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DMN2053UFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 20V RDS(ON) Max 35mΩ @ VGS = 4.5V 43mΩ @ VGS = 2.5V ID Max TA = +25°C 4.6A 4.2A Features  PCB Footprint of 4mm2  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Maximum Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen- and Antimony-Free. “Green” Device (Note 3)  The DMN2053UFDBQ is suitable for automotive applications requiring specific change control; This part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.
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