* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Gate
* Totally Lead-Free & Fully RoH.

requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 1694.

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. U-DFN3030-8 Mechanical Data
* Case: U-DFN.

DMN2024U

DMN2024UFDF

DMN2024UFU

DMN2024UFX

DMN2024UQ

DMN2024UTS

DMN2024UVT

DMN2024UVTQ

DMN2024LCA4

DMN2020LSN

DMN2020UFCL

DMN2022UCA4

DMN2022UFDF

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