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AP22916 - ULTRA-LOW LEAKAGE LOAD SWITCH

General Description

The AP22916 is a small, low leakage, single P-channel power MOSFET designed for low-power consumption and load-switching applications.

This power MOSFET has a typical RDS(ON) of 60mΩ at 5V, allowing increased load current handling capacity with a low forward voltage drop.

Key Features

  • Wide Input Voltage Range: 1.3V to 5.5V.
  • Low On-Resistance.
  • 280mΩ Typical @1.3V.
  • 135mΩ Typical @1.8V.
  • 65mΩ Typical @3.6V.
  • 54mΩ Typical @5.0V.
  • Continuous Current Capability up to 2A.
  • True Reverse Current Blocking (TRCB).
  • Discharging Resistor on VOUT When Disabled.
  • Ultra-Low Quiescent Current 0.5µA.
  • Active-High Control Pin.
  • Minimum 1.0V VIH of ON.
  • ESD Protection:.
  • Human Body Model: 2kV.
  • Charged Device Model: 1kV.
  • Packa.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP22916 1.3V-5.5V, 2A, 60mΩ ULTRA-LOW LEAKAGE LOAD SWITCH Description The AP22916 is a small, low leakage, single P-channel power MOSFET designed for low-power consumption and load-switching applications. This power MOSFET has a typical RDS(ON) of 60mΩ at 5V, allowing increased load current handling capacity with a low forward voltage drop. Multiple voltages correspond to different time options to support various system load conditions. The trigger of the load switch ON pin can be controlled to be enabled or disabled by an external low voltage digital signal for sequence control application. The smart, pull down feature is built into the ON pin. Once the enable voltage is higher than VIH, it will disconnect to avoid power loss.