DG4N70 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
| Part number | DG4N70 |
|---|---|
| Manufacturer | DGME |
| File Size | 1.22 MB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet |
 DG4N70 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| DG4000 | Function/Arbitrary Waveform Generator Guide Manual | RIGOL |
| DG401 | Monolithic CMOS Analog Switches | Intersil Corporation |
| DG401 | Improved / Dual / High-Speed Analog Switches | Maxim |
| DG401 | High-Speed CMOS Analog Switches | Vishay |
| DG401B | CMOS Analog Switches | Vishay |
| Part Number | Description |
|---|---|
| DG4N60 | N-CHANNEL ENHANCEMENT MODE MOSFET |
| DG4N65 | N-CHANNEL ENHANCEMENT MODE MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
