Datasheet4U Logo Datasheet4U.com

DG10N60 - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

DG10N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

📥 Download Datasheet

Datasheet Details

Part number DG10N60
Manufacturer DGME
File Size 0.99 MB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG10N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DG10N60 N N-CHANNEL ENHANCEMENT MODE MOSFET :V1.0 General Description DG10N60N,, ,,,。 ,,。 DG10N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 10 0.