| Description | Dual N-Channel Enhancement Power MOSFET Product Summary Rev1.0 DP8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 20 V 6.5A < 22mΩ < 27mΩ SOT23-6 Ab... |
| Features |
ristics (TA=25℃unless otherwise noted)
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics Gate Threshold Voltage
Symbol
BVDSS IDSS IGSS
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
gFS
Dynamic Characteristics
Input Capacitance
...
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| Datasheet |
 DP8205B Datasheet - 908.96KB |
