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BTD882T3S - NPN Transistor

This page provides the datasheet information for the BTD882T3S, a member of the BTD882T3 NPN Transistor family.

Features

  • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB772T3/S.
  • Pb-free package is available Symbol BTD882T3 Outline TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single Pulse Pw≦350µs,Duty≦2%. S.

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Datasheet preview – BTD882T3S

Datasheet Details

Part number BTD882T3S
Manufacturer Cystech Electonics Corp
File Size 290.52 KB
Description NPN Transistor
Datasheet download datasheet BTD882T3S Datasheet
Additional preview pages of the BTD882T3S datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848T3-H www.DataSheet4U.com Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTD882T3/S Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772T3/S • Pb-free package is available Symbol BTD882T3 Outline TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350µs,Duty≦2%.
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