BTB1216J3 Datasheet | Cystech Electonics Corp

Features - 4 Amps continuous current, up to 10 Amps peak current - Very low saturation voltage - Excellent gain characteristics specified up to 3 Amps - Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A - Ro HS pliant package BVCEO IC RCE(SAT) -140V -4A 90mΩ typ. Symbol Outline TO-252 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation @TA=25°C Power Dissipation @TC=25°C Operating and Storage Temperature Range Note: 1.Single pulse, Pw≤10ms BTB1216J3 CYStek Product Specification Symbol VCBO VCEO VEBO IC ICP IB Pd Tj ; Tstg Limits -180 -140 -6 -4 -10 (Note 1) -1 1 20 -55 ~ +150 Unit V V V A A A W °C CYStech Electronics Corp. Characteristics (Ta=25°C, unless otherwise specified) Symbol BVCBO - BVCEO BVEBO ICBO IEBO - VCE(sat)1 - VCE(sat)2 - VCE(sat)3 - VCE(sat)4 - VBE(sat) - VBE(on) h FE1 - h FE2 - h FE3 - h FE4 f T Cob Min. -180 -140 -6 100 150 75 Typ. -210 -170 -8 -40 -70 -110 -270 -930 -830 200 200 140 10 110 40 Max. -50 -10 -60 -120 -150 -370 -1110 -950 400 Unit V V V n A n A m V m V m V m V m V m V MHz p F .. Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 2/7 Test Conditions IC=-100μA IC=-10m A IE=-100μA VCB=-150V VEB=-6V IC=-100m A, IB=-5m A IC=-500m A, IB=-50m A IC=-1A, IB=-100m A IC=-3A, IB=-300m A IC=-3A, IB=-300m A VCE=-5V, IC=-3A VCE=-5V, IC=-10m A VCE=-5V, IC=-1A VCE=-5V, IC=-3A VCE=-5V, IC=-10A VCE=-10V, IC=-100m A, f=50MHz VCB=-20V, f=1MHz - Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of h FE2 Rank Range R 150~300 S...