BTA1952J3 Datasheet | Cystech Electonics Corp

Features - Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A - Excellent DC current gain characteristics - Wide SOA - plementary to BTC5103J3 - Ro HS pliant package BVCEO IC RCESAT -100V -5A 150mΩ Symbol Outline TO-252 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : - 1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -100 -80 -5 -5 -10 1 10 150 -55~+150 Unit V V V - 1 A W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) - h FE 1 - h FE 2 f T Min. -100 -80 -5 100 120 Typ. -0.3 120 Max. -10 -10 -1.0 -1.5 390 Unit V V V μA μA V V MHz .. Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 2/6 Test Conditions IC=-50μA, IE=0 IC=-1m A, IB=0 IE=-50μA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-3V, IC=-0.5A VCE=-2V, IC=-1A VCE=-5V, IC=-500m A,...