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BTA1952J3 - PNP Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A.
  • Excellent DC current gain characteristics.
  • Wide SOA.
  • Complementary to BTC5103J3.
  • RoHS compliant package BVCEO IC RCESAT -100V -5A 150mΩ Symbol BTA1952J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Stora.

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Datasheet Details

Part number BTA1952J3
Manufacturer Cystech Electonics Corp
File Size 235.17 KB
Description PNP Transistor
Datasheet download datasheet BTA1952J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 1/6 BTA1952J3 Features • Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A • Excellent DC current gain characteristics • Wide SOA • Complementary to BTC5103J3 • RoHS compliant package BVCEO IC RCESAT -100V -5A 150mΩ Symbol BTA1952J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1.