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MTNK6N3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • ESD protected gate , ≥2kV (HBM).
  • High speed switching.
  • Pb-free lead plating and halogen-free package.
  • Easily designed drive circuits.
  • Low-voltage drive.
  • Easy to use in parallel Symbol MTNK6N3 D Outline SOT-23 D G G:Gate S S:Source D:Drain S G Ordering Information Device MTNK6N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant pro.

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Datasheet Details

Part number MTNK6N3
Manufacturer Cystech Electonics
File Size 435.36 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTNK6N3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C057N3 Issued Date : 2017.01.09 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTNK6N3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=500mA RDS(ON)@VGS=4.5V, ID=200mA 60V 0.35A 0.9Ω(typ) 1.