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MTN7002CKN3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • ESD protected gate, ≥3kV.
  • High speed switching.
  • Pb-free lead plating and halogen-free package.
  • Easily designed drive circuits.
  • Low-voltage drive.
  • Easy to use in parallel Symbol MTN7002CKN3 D G G:Gate S S:Source D:Drain Outline SOT-23 D S G Ordering Information Device MTN7002CKN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant prod.

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Datasheet Details

Part number MTN7002CKN3
Manufacturer Cystech Electonics
File Size 366.71 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN7002CKN3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C087N3 Issued Date : 2016.12.30 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTN7002CKN3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=700mA RDS(ON)@VGS=4.5V, ID=500mA 60V 0.7A 0.27Ω(typ) 0.