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MTE2D4N06E3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTE2D4N06E3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device Package MTE2D4N06E3-0-UB-S TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zer.

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Datasheet Details

Part number MTE2D4N06E3
Manufacturer Cystech Electonics
File Size 309.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE2D4N06E3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C933E3 Issued Date : 2013.03.20 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE2D4N06E3 BVDSS ID @VGS=10V RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 60V 120A 2.6mΩ 2.