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MTE2D0N04H8 - N-Channel Enhancement Mode Power MOSFET

Features

  • RDS(ON)@VGS=10V, ID=20A.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package 40V 145A(silicon limit) 84A(package limit) 23A 1.65mΩ(typ) Symbol MTE2D0N04H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTE2D0N04H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment f.

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Datasheet Details

Part number MTE2D0N04H8
Manufacturer Cystech Electonics
File Size 481.06 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE2D0N04H8 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C072H8 Issued Date : 2016.03.02 Revised Date : 2016.03.04 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTE2D0N04H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDS(ON)@VGS=10V, ID=20A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 40V 145A(silicon limit) 84A(package limit) 23A 1.
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