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MTE09N06J3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTE09N06J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE09N06J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compou.

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Datasheet Details

Part number MTE09N06J3
Manufacturer Cystech Electonics
File Size 377.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE09N06J3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C912J3 Issued Date : 2015.06.17 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE09N06J3 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=7V, ID=20A 60V 50A 7 mΩ(typ) 7.
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