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MTE030N15RJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A 150V 28.7A 30 mΩ(typ) Symbol MTE030N15RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE030N15RJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for.

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Datasheet Details

Part number MTE030N15RJ3
Manufacturer Cystech Electonics
File Size 347.20 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE030N15RJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE030N15RJ3 Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 1/9 Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A 150V 28.