Datasheet4U Logo Datasheet4U.com

MTE013N08H8 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTE013N08H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTE013N08H8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compou.

📥 Download Datasheet

Datasheet Details

Part number MTE013N08H8
Manufacturer Cystech Electonics
File Size 470.24 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE013N08H8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTE030N15RH8 N-Channel Enhancement Mode Power MOSFET CYStech Electronics
MTE100N10KRH8 N-Channel Enhancement Mode Power MOSFET CYStech
MTE1011P Metal Can Infrarred Emitter Marktech Corporate
MTE1040 INFRARED LED Marktech Corporate
MTE1050A INFRARED LED Marktech Corporate

Other Datasheets by Cystech Electonics

Part Number Description
MTE013N08E3 N-Channel Enhancement Mode Power MOSFET
MTE013N10RJ3 N-Channel Enhancement Mode Power MOSFET
MTE010N10E3 N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 N-Channel Enhancement Mode Power MOSFET
MTE010N10FP N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C161H8 Issued Date : 2016.03.04 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTE013N08H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 80V 40A 10.5A 9.
Published: |