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MTC4203N8J - P- & N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package N-CH 30V 4.4A 6.3A 28mΩ 52mΩ 66mΩ P-CH -30V -4.5A -6.5A 31mΩ 43mΩ 47mΩ Equivalent Circuit MTC4203N8J Outline 2928-8J G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTC4203N8J-0-T1-G Package 2928-8J (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant.

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Datasheet Details

Part number MTC4203N8J
Manufacturer Cystech Electonics
File Size 523.93 KB
Description P- & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC4203N8J Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C443N8J Issued Date : 2016.12.21 Revised Date : age No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTC4203N8J BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON@VGS=10V(-10V) typ. RDSON@VGS=4.5V(-4.5V) typ. RDSON@VGS=4V(-4V) typ. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 30V 4.4A 6.3A 28mΩ 52mΩ 66mΩ P-CH -30V -4.5A -6.