MTB50N10E3 mosfet equivalent, n-channel enhancement mode power mosfet.
* Low Gate Charge
* Simple Drive Requirement
ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A
* Repetitive Avalanche Rated
* Fast Swi.
or systems.
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