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MTB1K0P25J3 - P-Channel Enhancement Mode MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free Lead Plating & Halogen-free Package Equivalent Circuit MTB1K0P25J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB1K0P25J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13.

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Datasheet Details

Part number MTB1K0P25J3
Manufacturer Cystech Electonics
File Size 443.00 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTB1K0P25J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C091J3 Issued Date : 2015.10.07 Revised Date : 2015.10.13 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB1K0P25J3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-3A RDS(ON)@VGS=-4.5V, ID=-3A -250V -3.2A 1.0Ω(typ) 1.
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