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MTB150N10J3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB150N10J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB150N10J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS c.

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Datasheet Details

Part number MTB150N10J3
Manufacturer Cystech Electonics
File Size 382.15 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB150N10J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C868J3 Issued Date : 2016.06.06 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB150N10J3 BVDSS ID @ VGS=10V, TA=25°C 100V 2.3A ID @ VGS=10V, TC=25°C 7A RDSON(TYP) VGS=10V, ID=10A 163 mΩ VGS=4.
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