Datasheet4U Logo Datasheet4U.com

MTA50N15J3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTA50N15J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTA50N15J3-0-T3-X Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs.

📥 Download Datasheet

Datasheet Details

Part number MTA50N15J3
Manufacturer Cystech Electonics
File Size 372.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA50N15J3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTA5D0N04Q8 N-Channel MOSFET CYStech
MTA5D0N04V8 N-Channel MOSFET CYStech
MTA5D0P01H8 P-Channel MOSFET CYStech
MTA001M High Output Interface Driver ICs Shindengen Electric
MTA002 High Output Interface Driver ICs Shindengen Electric

Other Datasheets by Cystech Electonics

Part Number Description
MTA50N15H8 N-Channel Enhancement Mode Power MOSFET
MTA50P01SN3 -14V P-Channel MOSFET
MTA55N02N3 20V N-Channel Enhancement Mode MOSFET
MTA55N20J3 N-Channel Enhancement Mode Power MOSFET
MTA010N01SN3 14V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C957J3 Issued Date : 2016.07.26 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTA50N15J3 BVDSS ID@TC=25°C, VGS=10V 150V 27A RDS(ON)@VGS=10V, ID=15A 44.3 mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 43.
Published: |