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MTA012A02CDV8 - Common Drain Dual N-Channel Enhancement Mode MOSFET

Key Features

  • VGS=1.8V, ID=1A.
  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • ESD protected gate.
  • Pb-free lead plating and halogen-free package 20V 9A 12.0 mΩ 16.2 mΩ 32.1 mΩ Equivalent Circuit MTA012A02CDV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTA012A02CDV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment fri.

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Datasheet Details

Part number MTA012A02CDV8
Manufacturer Cystech Electonics
File Size 389.42 KB
Description Common Drain Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTA012A02CDV8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C779V8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/9 Common Drain Dual N -Channel Enhancement Mode MOSFET MTA012A02CDV8 BVDSS ID VGS=4.5V, TA=25°C VGS=4.5V, ID=5A RDSON (TYP.) VGS=2.5V, ID=2.6A Features VGS=1.8V, ID=1A • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free lead plating and halogen-free package 20V 9A 12.0 mΩ 16.2 mΩ 32.