BTN5551A3 transistor equivalent, general purpose npn epitaxial planar transistor.
* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* Complement to BTP5401A3
Symbol
BTN5551A3
Outline
TO-92
B:Base C:Collector E:Emitter
EBC
.
requiring high breakdown voltage.
Features
* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* .
The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.
Features
* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* Complement to BTP5401A3
Symbol
BTN5551A3
Outline
TO-92
B:Base C:Col.
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