The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 1/4
BTD2098N3
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics www.DataSheet4U.com • Complementary to BTB1386N3
Symbol
BTD2098N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
BTD2098N3 Datasheet
