S70GL02GS memory equivalent, 2 gbit (256 mbyte) 3.0v flash memory.
a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/wo.
that require higher density, better performance and lower power consumption.
This document contains information for the .
The Cypress S70GL02GS 2-Gigabit MirrorBit® Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buf.
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