R5L16B Datasheet Cypress Semiconductor

Features and Benefits

■ 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See the Data Retention and Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral.