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PALC22V10D - FLASG ERASABLE REPROGRAMMABLE CMOS PAL DEVICE

General Description

grammable array logic device.

It is imĆ plemented with the familiar sumĆofĆproĆ ducts (ANDĆOR) logic structure and the programmable macrocell.

Key Features

  • R Device D DIP , LCC, and PLCC available Ċ 7.5 ns commercial version 5 ns tCO 5 ns tS 7.5 ns tPD 133ĆMHz state machine Ċ 10 ns military and industrial verĆ sions 6 ns tCO 6 ns tS 10 ns tPD 110ĆMHz state machine Ċ 15Ćns commercial and military versions Ċ 25Ćns commercial and military versions D High reliability Ċ Proven Flash EPROM technology Ċ 100% programming and functional testing D D D D D Advanced secondĆgeneration PAL arĆ chitecture Low power Ċ 90 mA max. commercial (10 ns) Ċ 130 mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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For new designs, please refer to the PALCE22V10. PALC22V10D Flash Erasable, Reprogrammable CMOS P AL Features R Device D DIP , LCC, and PLCC available Ċ 7.5 ns commercial version 5 ns tCO 5 ns tS 7.5 ns tPD 133ĆMHz state machine Ċ 10 ns military and industrial verĆ sions 6 ns tCO 6 ns tS 10 ns tPD 110ĆMHz state machine Ċ 15Ćns commercial and military versions Ċ 25Ćns commercial and military versions D High reliability Ċ Proven Flash EPROM technology Ċ 100% programming and functional testing D D D D D Advanced secondĆgeneration PAL arĆ chitecture Low power Ċ 90 mA max. commercial (10 ns) Ċ 130 mA max. commercial (7.