Datasheet4U Logo Datasheet4U.com

GVT7C1325A - 256K x 18 Synchronous Flow Through Burst SRAM

Download the GVT7C1325A datasheet PDF. This datasheet also covers the GVT71256E18 variant, as both devices belong to the same 256k x 18 synchronous flow through burst sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high-valued resistors.

Key Features

  • Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns 3.3V.
  • 5% and +10% power supply 2.5V or 3.3V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSSQ at all inputs and outputs Common data inputs and data outputs Byte Write Enable and G.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GVT71256E18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) 325A CY7C1325A/GVT71256E18 256K x 18 Synchronous Flow-Through Burst SRAM Features • • • • • • • • • • • • • • • • Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns 3.3V –5% and +10% power supply 2.5V or 3.