Datasheet Details
| Part number | GVT71256E18 |
|---|---|
| Manufacturer | Cypress (Infineon) |
| File Size | 685.75 KB |
| Description | (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM |
| Datasheet |
 GVT71256E18 Datasheet
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General Description
The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.
Each memory cell consists of four transistors and two high-valued resistors.
Key Features
- Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns 3.3V.
- 5% and +10% power supply 2.5V or 3.3V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSSQ at all inputs and outputs Common data inputs and data outputs Byte Write Enable and G.