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GVT71256C36 - (GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM

General Description

The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

Key Features

  • Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns.
  • Fast clock speed: 225 MHz, 200 MHz, 166 MHz, and 150 MHz.
  • Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns.
  • Optimal for performance (two cycle chip deselect, depth expansion without wait state).
  • 3.3V.
  • 5% and +10% power supply.
  • 3.3V or 2.5V I/O supply.
  • 5V tolerant inputs except I/Os.
  • Clamp diodes to V SS at all inputs and outputs.
  • Common data inputs and data out.

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Part Number Description Manufacturer

Other Datasheets by Cypress (Infineon)

Part Number Description
GVT71256B36 (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
GVT71256D36 (GVT7xxxx) 256K x 36 / 512K x 18 Pipelined SRAM
GVT71256E18 (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM
GVT71256T18 (GVT71256T18 / GVT7C1359A) 256K X 18 Synchronous-pipelined Cache Tag RAM
GVT71256ZB36 (GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 256K x 36/512K x 18 Pipelined SRAM Features • Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns • Fast clock speed: 225 MHz, 200 MHz, 166 MHz, and 150 MHz • Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns • Optimal for performance (two cycle chip deselect, depth expansion without wait state) • 3.3V –5% and +10% power supply • 3.3V or 2.