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GVT71256B36 - (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM

General Description

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high-valued resistors.

Key Features

  • Fast access times: 6.0, 6.5, 7.0, and 8.0 ns Fast clock speed: 150, 133, 117, and 100 MHz 1 ns set-up time and hold time Fast OE access times: 3.5 ns and 4.0 ns 3.3V.
  • 5% and +10% power supply 3.3V or 2.5V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSS at all inputs and outputs Common data inputs and data outputs Byte Write Enable and Global Write control Multiple c.

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Part Number Description Manufacturer

Other Datasheets by Cypress (Infineon)

Part Number Description
GVT71256C36 (GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM
GVT71256D36 (GVT7xxxx) 256K x 36 / 512K x 18 Pipelined SRAM
GVT71256E18 (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM
GVT71256T18 (GVT71256T18 / GVT7C1359A) 256K X 18 Synchronous-pipelined Cache Tag RAM
GVT71256ZB36 (GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) 1CY7C1361A CY7C1361A/GVT71256B36 CY7C1363A/GVT71512B18 256K x 36/512K x 18 Synchronous Burst Flowthrough SRAM Features • • • • • • • • • • • Fast access times: 6.0, 6.5, 7.0, and 8.0 ns Fast clock speed: 150, 133, 117, and 100 MHz 1 ns set-up time and hold time Fast OE access times: 3.5 ns and 4.0 ns 3.3V –5% and +10% power supply 3.3V or 2.