* Wide voltage range: 2.2V
  –3.6V
* Access Time: 70 ns
* Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active curr.

such as cellular telephones. The device can be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE an.

of read and write modes. Functional Description[1] The CYU01M16SCE is a high-performance CMOS Pseudo Static RAM organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide .

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