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CYDM256B16 - 1.8 V 4 K/8 K/16 K x 16 MoBL Dual-Port Static RAM

Download the CYDM256B16 datasheet PDF (CYDM064B16 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 1.8 v 4 k/8 k/16 k x 16 mobl dual-port static ram.

Features

  • True dual ported memory cells that allow simultaneous access of the same memory location.
  • 4, 8, or 16K × 16 organization.
  • Ultra Low operating power.
  • Active: ICC = 15 mA (typical) at 55 ns.
  • Standby: ISB3 = 2 A (typical).
  • Small footprint: available in a 6x6 mm 100-pin Pb-free vfBGA.
  • Port independent 1.8V, 2.5V, and 3.0V I/Os.
  • Full asynchronous operation.
  • Automatic power down.
  • Pin select for Master or Slave.
  • Expandable data bus to 32-bits wi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CYDM064B16-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

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CYDM064B16 CYDM128B16 CYDM256B16 1.8 V 4 K/8 K/16 K × 16 MoBL® Dual-Port Static RAM 1.8V 4K/8K/16K x 16 MoBL® Dual-Port Static RAM Features ■ True dual ported memory cells that allow simultaneous access of the same memory location ■ 4, 8, or 16K × 16 organization ■ Ultra Low operating power ❐ Active: ICC = 15 mA (typical) at 55 ns ❐ Standby: ISB3 = 2 A (typical) ■ Small footprint: available in a 6x6 mm 100-pin Pb-free vfBGA ■ Port independent 1.8V, 2.5V, and 3.
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