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CY7C4291V - Low-Voltage Deep Sync FIFOs

Download the CY7C4291V datasheet PDF. This datasheet also covers the CY7C4261V variant, as both devices belong to the same low-voltage deep sync fifos family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY7

Key Features

  • 3.3 V operation for low-power consumption and easy integration into low-voltage systems.
  • High-speed, low-power, first-in first-out (FIFO) memories.
  • 16K × 9 (CY7C4261V).
  • 64K × 9 (CY7C4281V).
  • 128K × 9 (CY7C4291V).
  • 0.35-micron CMOS for optimum speed or power.
  • High-speed 100-MHz operation (10-ns read/write cycle times).
  • Low power.
  • ICC = 25 mA.
  • ISB = 4 mA.
  • Fully asynchronous and simultaneous read and write operation.
  • Empty, full, and progra.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C4261V-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY7C429 256/512/1K/2K/4K x 9 Asynchronous FIFO Cypress
CY7C4221 1 K / 2 K x 9 Synchronous FIFOs Cypress
CY7C4231 1 K / 2 K x 9 Synchronous FIFOs Cypress
CY7C425 256/512/1K/2K/4K x 9 Asynchronous FIFO Cypress
CY7C4281 64K/128K x 9 Deep Sync FIFOs Cypress

Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C4291 64K/128K x 9 Deep Sync FIFOs
CY7C4292 (CY7C4282 / CY7C4292) 64K/128K x 9 Deep Sync FIFOs
CY7C4292V (CY7C4282V / CY7C4292V) 64K/128Kx9 Low Voltage Deep Sync FIFOs
CY7C4201V Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
CY7C4205 64/256/512/1K/2K/4K x 18 Synchronous FIFOs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C4261V CY7C4281V/CY7C4291V 16K/64K/128K × 9 Low-Voltage Deep Sync™ FIFOs 16K/64K/128K × 9 Low-Voltage Deep Sync™ FIFOs Features ■ 3.3 V operation for low-power consumption and easy integration into low-voltage systems ■ High-speed, low-power, first-in first-out (FIFO) memories ■ 16K × 9 (CY7C4261V) ■ 64K × 9 (CY7C4281V) ■ 128K × 9 (CY7C4291V) ■ 0.35-micron CMOS for optimum speed or power ■ High-speed 100-MHz operation (10-ns read/write cycle times) ■ Low power ❐ ICC = 25 mA ❐ ISB = 4 mA ■ Fully asynchronous and simultaneous read and write operation ■ Empty, full, and programmable Almost Empty and Almost Full status flags ■ Output-enable (OE) pin ■ Independent read- and write-enable pins ■ Supports free-running 50% duty cycle clock inputs ■ Width-expansion capability ■ Pin-compatible 3.