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CY7C25652KV18, CY7C25632KV18 - 72-Mbit QDR II+ SRAM Four-Word Burst Architecture

Cypress Semiconductor

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CY7C25652KV18 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C25652KV18, CY7C25632KV18. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	CY7C25652KV18, CY7C25632KV18
Manufacturer	Cypress Semiconductor
File Size	608.41 KB
Description	72-Mbit QDR II+ SRAM Four-Word Burst Architecture
Datasheet	CY7C25632KV18-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C25652KV18, CY7C25632KV18. Please refer to the document for exact specifications by model.

CY7C25652KV18 Product details

Features

Separate independent read and write data ports.
Supports concurrent transactions.
550 MHz clock for high bandwidth.
Four-word burst for reducing address bus frequency.
Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz.
Available in 2.5 clock cycle latency.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Echo clocks (CQ and CQ) simplify data capture in high-speed sy.

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Published: Mar 14, 2017 |