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CY7C2563XV18 Datasheet

Manufacturer: Cypress (now Infineon)
CY7C2563XV18 datasheet preview

CY7C2563XV18 Details

Part number CY7C2563XV18
Datasheet CY7C2563XV18-CypressSemiconductor.pdf
File Size 1.19 MB
Manufacturer Cypress (now Infineon)
Description 72-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture
CY7C2563XV18 page 2 CY7C2563XV18 page 3

CY7C2563XV18 Overview

CY7C2563XV18/CY7C2565XV18 72-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT.

CY7C2563XV18 Key Features

  • Separate independent read and write data ports
  • Supports concurrent transactions
  • 633 MHz clock for high bandwidth
  • Four-word burst for reducing address bus frequency
  • Double data rate (DDR) interfaces on both read and write ports (data transferred at 1266 MHz) at 633 MHz
  • Available in 2.5 clock cycle latency
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems
  • Data valid pin (QVLD) to indicate valid data on the output

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