CY7C25632KV18 - 72-Mbit QDR II+ SRAM Four-Word Burst Architecture

Cypress Semiconductor

CY7C25632KV18 Description

CY7C25632KV18 CY7C25652KV18 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ SRAM Four-Word Burs.

CY7C25632KV18 Features

* Separate independent read and write data ports
* Supports concurrent transactions
* 550 MHz clock for high bandwidth
* Four-word burst for reducing address bus frequency
* Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz

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CY7C25632KV18 Datasheet Preview — Preview of CY7C25632KV18 PDF

Datasheet Details

Part number: CY7C25632KV18
Manufacturer: Cypress Semiconductor
File Size: 608.41 KB
Datasheet: CY7C25632KV18-CypressSemiconductor.pdf
Description: 72-Mbit QDR II+ SRAM Four-Word Burst Architecture

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72-Mbit QDR II + SRAM Four-Word Burst Architecture Cypress Semiconductor

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