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CY7C245A Datasheet 2K x 8 Reprogrammable Registered PROM

Manufacturer: Cypress (now Infineon)

Download the CY7C245A datasheet PDF. This datasheet also includes the CY7 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7-C245.pdf) that lists specifications for multiple related part numbers.

General Description

The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP.

The ceramic package may be equipped with an erasure window;

when exposed to UV light the PROM is erased and can then be reprogrammed.

Overview

CY7C245A 2K x 8 Reprogrammable Registered PROM.

Key Features

  • Windowed for reprogrammability.
  • CMOS for optimum speed/power.
  • High speed.
  • 15-ns address set-up.
  • 10-ns clock to output.
  • Low power.
  • 330 mW (commercial) for -25 ns.
  • 660 mW (military).
  • Programmable synchronous or asynchronous output enable.
  • On-chip edge-triggered registers.
  • Programmable asynchronous register (INIT).
  • EPROM technology, 100% programmable.
  • Slim, 300-mil, 24-pin plastic o.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY7C2163KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C2165KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C2168KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture
CY7C2170KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture
CY7C2245KV18 36-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C225A 512 x 8 Registered PROM
CY7C2262XV18 36-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture
CY7C2263KV18 36-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C2263XV18 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture
CY7C2264XV18 36-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture