This page provides the datasheet information for the CY7C2165KV18, a member of the CY7C2163KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture family.
Datasheet Summary
Features
Separate independent read and write data ports.
Supports concurrent transactions.
550-MHz clock for high bandwidth.
Four-word burst for reducing address bus frequency.
Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz.
Available in 2.5 clock cycle latency.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Echo clocks (CQ and CQ) simplify data capture in high-speed.
CY7C2163KV18/CY7C2165KV18
18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features
■ Separate independent read and write data ports ❐ Supports concurrent transactions
■ 550-MHz clock for high bandwidth
■ Four-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz
■ Available in 2.
CY7C2165KV18 Datasheet
