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Cypress Semiconductor Electronic Components Datasheet

CY7C199 Datasheet

32K x 8 Static RAM

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CY7C199
Features
• High speed
— 10 ns
• Fast tDOE
• CMOS for optimum speed/power
• Low active power
— 467 mW (max, 12 ns “L” version)
• Low standby power
— 0.275 mW (max, “L” version)
• 2V data retention (“L” version only)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The CY7C199 is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
CE
WE
OE
INPUT BUFFER
1024 x 32 x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
32K x 8 Static RAM
is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and three-state drivers. This device
has an automatic power-down feature, reducing the power
consumption by 81% when deselected. The CY7C199 is in the
standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O0 through I/O7) is written into the memory location
addressed by the address present on the address pins (A0
through A14). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Pin Configurations
DIP / SOJ / SOIC
Top View
LCC
Top View
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 A4
25 A3
24 A2
23 A1
22 OE
21 A0
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
3 2 1 28 27
A8 4
A9 5
26 A4
25 A3
A10 6
A11 7
A12 8
24 A2
23 A1
22 OE
A13 9
A14 10
21 A0
20 CE
I/O0 11
19 I/O7
I/O1 12
18 I/O6
1314151617
OE
A1
A2
A3
A4
WE
V CC
A5
A6
A7
A8
A9
A 10
A 11
22
23
24
25
26
27
28
1
2
3
4
5
6
7
TSOP I
Top View
(not to scale)
21 A 0
20 CE
19 I/O 7
18 I/O 6
17 I/O 5
16 I/O 4
15 I/O 3
14 GND
13 I/O 2
12 I/O 1
11 I/O 0
10 A 14
9 A 13
8 A 12
Selection Guide
Maximum Access Time
Maximum Operating Current
L
Maximum CMOS Standby Current
L
Shaded area contains advance information.
7C199
-8
8
120
0.5
7C199
-10
10
110
90
0.5
0.05
7C199
-12
12
160
90
10
0.05
7C199
-15
15
155
90
10
0.05
7C199
-20
20
150
90
10
0.05
7C199
-25
25
150
80
10
0.05
7C199
-35
35
140
70
10
0.05
7C199
-45
45
140
Unit
ns
mA
10 mA
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05160 Rev. *A
Revised January 7, 2003


Cypress Semiconductor Electronic Components Datasheet

CY7C199 Datasheet

32K x 8 Static RAM

No Preview Available !

CY7C199
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Storage Temperature .................................–65°C to +150°C Latch-up Current.................................................... > 200 mA
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Operating Range
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) ........................................... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State[1] ....................................0.5V to VCC + 0.5V
DC Input Voltage[1].................................0.5V to VCC + 0.5V
Range
Commercial
Industrial
Military
Ambient Temperature[2]
0°C to +70°C
40°C to +85°C
55°C to +125°C
VCC
5V ± 10%
5V ± 10%
5V ± 10%
Electrical Characteristics Over the Operating Range (-8, -10, -12, -15)[3]
Parameter
Description
VOH Output HIGH Voltage
VOL Output LOW Voltage
VIH Input HIGH Voltage
Test Conditions
VCC = Min., IOH=4.0 mA
VCC = Min., IOL=8.0 mA
VIL Input LOW Voltage
IIX
Input Load Current
GND < VI < VCC
IOZ Output Leakage Current GND < VO < VCC, Output
Disabled
ICC
VCC Operating Supply VCC = Max.,
Coml
Current
IOUT = 0 mA,
L
f = fMAX = 1/tRC Mil
ISB1 Automatic CE
Max. VCC, CE > Coml
Power-down CurrentVIH, VIN > VIH or L
TTL Inputs
VIN < VIL, f = fMAX
ISB2 Automatic CE
Max. VCC,
Coml
Power-down Current
CMOS Inputs
CE > VCC 0.3V
VIN > VCC 0.3V
or VIN < 0.3V, f = 0
L
Mil
7C199-8 7C199-10 7C199-12 7C199-15
Min. Max. Min. Max. Min. Max. Min. Max. Unit
2.4 2.4 2.4 2.4
V
0.4 0.4 0.4 0.4 V
2.2 VCC 2.2 VCC 2.2 VCC 2.2 VCC V
+0.3V
+0.3V
+0.3V
+0.3V
0.5 0.8 0.5 0.8 0.5 0.8 0.5 0.8 V
5 +5 5 +5 5 +5 5 +5 µA
5 +5 5 +5 5 +5 5 +5 µA
120 110 160 155 mA
85 85 100 mA
180 mA
5 5 30 30 mA
5 5 5 mA
0.5 0.5 10 10 mA
0.05 0.05 0.05 0.05 mA
15 mA
Electrical Characteristics Over the Operating Range (-20, -25, -35, -45) [3]
7C199-20 7C199-25 7C199-35 7C199-45
Parameter
Description
Test Conditions
Min. Max. Min. Max. Min. Max. Min. Max. Unit
VOH
VOL
VIH
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
VCC = Min., IOH = 4.0 mA 2.4 2.4 2.4
2.4
V
VCC = Min., IOL = 8.0 mA
0.4
0.4
0.4
0.4 V
2.2 VCC 2.2 VCC 2.2 VCC 2.2 VCC V
+0.3V
+0.3V
+0.3V
+0.3V
VIL Input LOW Voltage
0.5 0.8 -0.5 0.8 -0.5 0.8 -0.5 0.8 V
IIX
Input Load Current
GND < VI < VCC
5 +5 5 +5 5 +5 5 +5 µA
IOZ Output Leakage Current GND < VI < VCC, Output 5 +5 5 +5 5 +5 5 +5 µA
Disabled
ICC
VCC Operating Supply VCC = Max.,
Coml
150
150
Current
IOUT = 0 mA,
L
90 80
f = fMAX = 1/tRC
Mil
170 150
140
70
150
140 mA
70 mA
150 mA
Shaded area contains advance information.
Notes:
1. VIL (min.) = 2.0V for pulse durations of less than 20 ns.
2. TA is the instant oncase temperature.
3. See the last page of this specification for Group A subgroup testing information.
Document #: 38-05160 Rev. *A
Page 2 of 13


Part Number CY7C199
Description 32K x 8 Static RAM
Maker Cypress Semiconductor
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CY7C199 Datasheet PDF






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