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CY7C199 - 32K x 8 Static RAM

Download the CY7C199 datasheet PDF. This datasheet also covers the CY7 variant, as both devices belong to the same 32k x 8 static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits.

Key Features

  • High speed.
  • 10 ns.
  • Fast tDOE.
  • CMOS for optimum speed/power.
  • Low active power.
  • 467 mW (max, 12 ns “L” version).
  • Low standby power.
  • 0.275 mW (max, “L” version).
  • 2V data retention (“L” version only).
  • Easy memory expansion with CE and OE features.
  • TTL-compatible inputs and outputs.
  • Automatic power-down when deselected is provided by an active LOW Chip Enable (CE) and active LOW Output Enable.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7-C199.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW (max, 12 ns “L” version) • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only) • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The CY7C199 is in the standard 300-mil-wide DIP, SOJ, and LCC packages. An active LOW Write Enable signal (WE) controls the writing/reading operation of the memory.