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Cypress Semiconductor Electronic Components Datasheet

CY7C197 Datasheet

256Kx1 Static RAM

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97
CY7C197
Features
• High speed
— 12 ns
• CMOS for optimum speed/power
• Low active power
— 880 mW
• Low standby power
— 220 mW
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The CY7C197 is a high-performance CMOS static RAM orga-
nized as 256K words by 1 bit. Easy memory expansion is pro-
256Kx1 Static RAM
vided by an active LOW Chip Enable (CE) and three-state driv-
ers. The CY7C197 has an automatic power-down feature,
reducing the power consumption by 75% when deselected.
Writing to the device is accomplished when the Chip Enable
(CE) and Write Enable (WE) inputs are both LOW. Data on the
input pin (DIN) is written into the memory location specified on
the address pins (A0 through A17).
Reading the device is accomplished by taking chip enable
(CE) LOW while Write Enable (WE) remains HIGH. Under
these conditions the contents of the memory location specified
on the address pins will appear on the data output (DOUT) pin.
The output pin stays in a high-impedance state when Chip
Enable (CE) is HIGH or Write Enable (WE) is LOW.
The CY7C197 utilizes a die coat to insure alpha immunity.
Logic Block Diagram
Pin Configurations
INPUT BUFFER
A13
A14
A15
A16
A17
A0 1024 x 256
A1 ARRAY
A2
A3
A4
COLUMN
DECODER
POWER
DOWN
DI
DIP/SOJ
Top View
LCC
Top View
A0 1
24 VCC
A1 2
A2 3
23 A17
22 A16
3 2 1 28 27
NC 4
26 NC
A3 4
21 A15
A3 5
25 A16
A4 5
20 A14
A4 6
24 A15
DO
A5 6 7C197 19 A13
A6 7
18 A12
A7 8
17 A11
A8 9
16 A10
A5
A6
A7
A8
DOUT
7
8 7C197
9
10
11
23 A14
22 A13
21 A12
20 A11
19 A10
DOUT 10
15 A9
NC 12
18 NC
WE 11
14 DIN
1314151617
GND 12
13 CE
C197-2
C197-3
CE
A5 A6 A7 A8 A9 A10 A11 A12
WE
C197-1
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
7C197-12
12
150
30
7C197-15
15
140
30
7C197-20
20
135
30
7C197-25
25
95
30
7C197-35
35
95
30
7C197-45
45
30
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05049 Rev. **
Revised August 24, 2001


Cypress Semiconductor Electronic Components Datasheet

CY7C197 Datasheet

256Kx1 Static RAM

No Preview Available !

CY7C197
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .....................................−65°C to +150°C
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12).................................................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ....................................... −0.5V to VCC + 0.5V
Electrical Characteristics Over the Operating Range
DC Input Voltage[1].................................... −0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
VCC
5V ± 10%
7C197-12
7C197-15
Parameter
Description
Test Conditions
Min. Max. Min. Max.
VOH Output HIGH Voltage VCC = Min., IOH = −4.0 mA
2.4
2.4
VOL Output LOW Voltage VCC = Min. IOL=12.0 mA
0.4 0.4
VIH Input HIGH Voltage
2.2 VCC 2.2
+ 0.3V
VCC
+0.3V
VIL Input LOW Voltage[1]
−0.5 0.8 −0.5 0.8
IIX Input Load Current GND < VI < VCC
−5 +5 −5 +5
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
−5
+5
−5
+5
IOS
Output Short
Circuit Current[2]
VCC = Max., VOUT = GND
−300
−300
ICC VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
150 140
ISB1
Automatic CE Power-Down
Current—TTL Inputs[3]
Max. VCC, CE > VIH, VIN > VIH or
VIN < VIL, f = fMAX
30 30
ISB2
Automatic CE Power-Down
Current—CMOS Inputs[3]
Max. VCC, CE > VCC − 0.3V,
VIN > VCC − 0.3V or VIN < 0.3V
10 10
Notes:
1. V(min.) = −2.0V for pulse durations of less than 20 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
3. A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
Document #: 38-05049 Rev. **
Page 2 of 10


Part Number CY7C197
Description 256Kx1 Static RAM
Maker Cypress Semiconductor
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CY7C197 Datasheet PDF






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