Datasheet Summary
CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18
18-Mbit DDR-II SRAM 4-Word Burst Architecture
Features
Functional Description
- 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
- 300-MHz clock for high bandwidth
- 4-Word burst for reducing address bus frequency
- Double Data Rate (DDR) interfaces
(data transferred at 600MHz) @ 300 MHz
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Synchronous internally self-timed writes
- 1.8V core power supply with HSTL inputs and outputs
-...