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CY7C1911BV18, CY7C1311BV18 - (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

CY7C1911BV18 Description

CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit QDR™-II SRAM 4-Word Burst Architecture .
The CY7C1311BV18, CY7C1911BV18, CY7C1313BV18, and CY7C1315BV18 are 1.

CY7C1911BV18 Features

* Separate Independent Read and Write data ports
* Supports concurrent transactions
* 300-MHz clock for high bandwidth
* 4-Word Burst for reducing address bus frequency
* Double Data Rate (DDR) interfaces on both Read and Write ports (data transferred at 600 M

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: CY7C1911BV18, CY7C1311BV18. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
CY7C1911BV18, CY7C1311BV18
Manufacturer
Cypress Semiconductor
File Size
529.85 KB
Datasheet
CY7C1311BV18_CypressSemiconductor.pdf
Description
(CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
Note
This datasheet PDF includes multiple part numbers: CY7C1911BV18, CY7C1311BV18.
Please refer to the document for exact specifications by model.

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📌 All Tags

CY7C1x1xBV18 18-Mb QDRTM-II SRAM 4-Word Burst Architecture Cypress Semiconductor
Cypress Semiconductor CY7C1911BV18-like datasheet