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Cypress Semiconductor Electronic Components Datasheet

CY7C188 Datasheet

32K x 9 Static RAM

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88
CY7C188
Features
• High speed
— 15 ns
• Automatic power-down when deselected
• Low active power
— 660 mW
• Low standby power
— 140 mW
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and OE
features
Functional Description
The CY7C188 is a high-performance CMOS static RAM orga-
nized as 32,768 words by 9 bits. Easy memory expansion is
32K x 9 Static RAM
provided by an active-LOW chip enable (CE1), an active-HIGH
chip enable (CE2), an active-LOW output enable (OE), and
three-state drivers. The device has an automatic power-down
feature that reduces power consumption by more than 75%
when deselected.
Writing to the device is accomplished by taking CE1 and write
enable (WE) inputs LOW and CE2 input HIGH. Data on the
nine I/O pins (I/Oo I/O8) is then written into the location spec-
ified on the address pins (A0 A14).
Reading from the device is accomplished by taking CE1 and
OE LOW while forcing WE and CE2 HIGH. Under these con-
ditions, the contents of the memory location specified by the
address pins will appear on the I/O pins.
The nine input/output pins (I/O0 I/O8) are placed in a high-im-
pedance state when the device is deselected (CE1 HIGH or
CE2 LOW), the outputs are disabled (OE HIGH), or during a
write operation (CE1 LOW, CE2 HIGH, and WE LOW).
The CY7C188 is available in standard 300-mil-wide SOJs.
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
CE1
CE2
WE
OE
INPUT BUFFER
32K x 9
ARRAY
COLUMN
DECODER
POWER
DOWN
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA) Commercial
Maximum Standby Current (mA)
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
C1881
Pin Configuration
DIP/SOJ
Top View
NC
NC
A8
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
I/O3
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A14
30 CE2
29 WE
28 A13
27 A9
26 A10
25 A11
24 OE
23 A12
22 CE1
21 I/O8
20 I/O7
19 I/O6
18 I/O5
17 I/O4
C1882
7C18815
15
120
35
7C18820
20
170
35
7C18825
25
165
35
7C18835
35
160
30
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05053 Rev. **
Revised August 24, 2001


Cypress Semiconductor Electronic Components Datasheet

CY7C188 Datasheet

32K x 9 Static RAM

No Preview Available !

CY7C188
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. 65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage on VCC Relative to GND
(Pin 32 to Pin 16) .......................................... 0.5V to + 7.0V
DC Voltage Applied to Outputs
in High Z State[1] ....................................0.5V to VCC + 0.5V
DC Input Voltage[1] ................................. 0.5V to VCC +0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
VCC
5V ± 10%
Electrical Characteristics Over the Operating Range[2]
Parameter
Description
VOH Output HIGH
Voltage
VOL Output LOW
Voltage
VIH Input HIGH
Voltage
VIL
Input LOW
Voltage[1]
IIX Input Load Current
IOZ Output Leakage
Current
IOS
Output Short
Circuit Current[3]
ICC VCC Operating
Supply Current
ISB1 Automatic CE
Power-Down
Current
TTL Inputs
ISB2 Automatic CE
Power-Down
Current
CMOS Inputs
Test Conditions
VCC = Min.,
IOH = 4.0 mA
VCC = Min.,
IOL = 8.0 mA
GND VI VCC
GND VI VCC,
Output Disabled
VCC = Max.,
VOUT = GND
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
Max. VCC, CE1 VIH
or CE2 VIL,
VIN VIH or VIN VIL,
f = fMAX
Max. VCC,
CE1 VCC 0.3V or
CE2 0.3V,
VIN VCC 0.3V
or VIN 0.3V, f = 0
7C18815
Min. Max
2.4
7C18820 7C18825
Min. Max. Min. Max.
2.4 2.4
7C18835
Min. Max.
2.4
Unit
V
0.4 0.4 0.4 0.4 V
2.2
0.5
VCC
+ 0.3
0.8
2.2
0.5
VCC
+ 0.3
0.8
2.2
0.5
VCC
+ 0.3
0.8
2.2
0.5
VCC
+ 0.3
0.8
V
V
5 +5 5 +5 5 +5 5 +5 µA
5 +5 5 +5 5 +5 5 +5 µA
300
300
300
300 mA
120 170 165 160 mA
35 35 35 30 mA
10 15 15 15 mA
Capacitance[4]
Parameter
Description
Test Conditions
Max.
CIN: Addresses
CIN: Controls
Input Capacitance
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
COUT
Output Capacitance
Notes:
1. Minimum voltage is equal to 2.0V for pulse durations less than 20 ns.
2. .See the last page of this specification for Group A subgroup testing information.
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
6
8
8
Unit
pF
pF
pF
Document #: 38-05053 Rev. **
Page 2 of 8


Part Number CY7C188
Description 32K x 9 Static RAM
Maker Cypress Semiconductor
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CY7C188 Datasheet PDF






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