Datasheet4U Logo Datasheet4U.com

CY7C186 - 8Kx8 Static RAM

Description

The CY7C186 is a high-performance CMOS static RAM organized as 8192 words by 8 bits.

Features

  • High speed.
  • 20 ns.
  • Low active power.
  • 605 mW.
  • Low standby power.
  • 110 mW.
  • CMOS for optimum speed/power.
  • Easy memory expansion with CE1, CE2, and OE features.
  • TTL-compatible inputs and outputs.
  • Automatic power-down when deselected provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feat.

📥 Download Datasheet

Datasheet preview – CY7C186

📁 Similar Datasheet

  • CY7C1006D - 1-Mbit (256K x 4) Static RAM (Cypress)
  • CY7C1011G - 2-Mbit (128K words x 16 bit) Static RAM (Cypress)
  • CY7C1041G - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1041GE - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1041GN - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1049GN - 4-Mbit (512K words x 8 bit) Static RAM (Cypress)
  • CY7C1061DV33 - 16-Mbit (1 M X 16) Static RAM (Cypress)
  • CY7C1061G - 16-Mbit (1 M words x 16 bit) Static RAM (Cypress)
  • CY7C106D - 1-Mbit (256K x 4) Static RAM (Cypress)
  • CY7C131AE - 1K/2K x 8 Dual-Port Static RAM (Cypress)
Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

Click to expand full text
86 CY7C186 8Kx8 Static RAM Features • High speed — 20 ns • Low active power — 605 mW • Low standby power — 110 mW • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80% when deselected. The CY7C186 is in a 600-mil-wide PDIP package and a 32-pin TSOP (std. pinout). An active LOW write enable signal (WE) controls the writing/reading operation of the memory.
Published: |