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Cypress Semiconductor Electronic Components Datasheet

CY7C186 Datasheet

8Kx8 Static RAM

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86
CY7C186
8Kx8 Static RAM
Features
• High speed
— 20 ns
• Low active power
— 605 mW
• Low standby power
— 110 mW
• CMOS for optimum speed/power
• Easy memory expansion with CE1, CE2, and OE
features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The CY7C186 is a high-performance CMOS static RAM orga-
nized as 8192 words by 8 bits. Easy memory expansion is
LogicBlock Diagram
A1
A2
AA34
AA56
AA78
CE1
CE2
WE
OE
INPUT BUFFER
256 x 32 x 8
ARRAY
POWER
COLUMN DECODER DOWN
provided by an active LOW chip enable (CE1), an active HIGH
chip enable (CE2), and active LOW output enable (OE) and
three-state drivers. The device has an automatic power-down
feature (CE1), reducing the power consumption by over 80%
when deselected. The CY7C186 is in a 600-mil-wide PDIP
package and a 32-pin TSOP (std. pinout).
An active LOW write enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE1 and WE in-
puts are both LOW and CE2 is HIGH, data on the eight data
input/output pins (I/O0 through I/O7) is written into the memory
location addressed by the address present on the address
pins (A0 through A12). Reading the device is accomplished by
selecting the device and enabling the outputs, CE1 and OE
active LOW, CE2 active HIGH, while WE remains inactive or
HIGH. Under these conditions, the contents of the location ad-
dressed by the information on address pins are present on the
eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH. A die coat is used to insure alpha immunity.
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Pin Configuration
DIP
Top View
NC
A4
A5
A6
A7
A8
A9
A10
A11
A12
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 CE 2
25 A3
24 A2
23 A1
22
21
OE
A0
20 CE 1
19 I/O 7
18 I/O 6
17 I/O 5
16 I/O 4
15 I/O 3
Selection Guide[1]
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Notes:
1. For military specifications, see the CY7C186A datasheet.
7C186-20
20
110
20/15
7C186-25
25
100
20/15
7C186-35
35
100
20/15
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05280 Rev. **
Revised March 22, 2002


Cypress Semiconductor Electronic Components Datasheet

CY7C186 Datasheet

8Kx8 Static RAM

No Preview Available !

CY7C186
Pin Configurations (continued)
OE
A1
A2
A3
CE2
WE
VCC
NC
NC
NC
A4
A
A
5
6
A
A
A
7
8
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Maximum Ratings
TSOP
Top View
32 A0
21 CE
30 I/O7
29 I/O6
28 I/O5
27 I/O4
26
25
IN/OC3
24 NC
23 GND
22 I/O2
21 I/O1
20 I/O0
19 A12
18 A11
17 A10
C186-3
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[2] ............................................ 0.5V to +7.0V
DC Input Voltage[2] ........................................ 0.5V to +7.0V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
VCC
5V ± 10%
Electrical Characteristics Over the Operating Range
Parameter
VOH
VOL
VIH
VIL
IIX
IOZ
IOS
ICC
ISB1
ISB2
Description
Test Conditions
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage[2]
VCC = Min., IOH = 4.0 mA
VCC = Min., IOL = 8.0 mA
Input Load Current
Output Leakage Current
Output Short
Circuit Current[3]
VCC Operating
Supply Current
Automatic CE1
Power-Down Current
GND < VI < VCC
GND < VI < VCC, Output Disabled
VCC = Max.,
VOUT = GND
VCC = Max.,
IOUT = 0 mA
Max. VCC, CE1 > VIH,
Min. Duty Cycle=100%
Automatic CE1
Power-Down Current
Max. VCC, CE1 > VCC 0.3V,
VIN > VCC 0.3V or VIN < 0.3V
7C186-20
Min. Max.
2.4
0.4
2.2
0.5
VCC
0.8
5 +5
5 +5
300
7C186-25,35
Min. Max.
2.4
0.4
2.2
0.5
VCC
0.8
5 +5
5 +5
300
Unit
V
V
V
V
µA
µA
mA
110 100 mA
20 20 mA
15 15 mA
Capacitance[4]
Parameter
Description
Test Conditions
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Notes:
2. Minimum voltage is equal to 3.0V for pulse durations less than 30 ns.
3. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
Max.
7
7
Unit
pF
pF
Document #: 38-05280 Rev. **
Page 2 of 9


Part Number CY7C186
Description 8Kx8 Static RAM
Maker Cypress Semiconductor
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CY7C186 Datasheet PDF






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